Abstract
Platinum-hydrogenated amorphous silicon interfaces have been studied by fluorescence-detected x-ray absorption spectroscopy using synchrotron radiation. The local structure and bonding states of thin platinum layers (10–90 Å) were analyzed as a function of annealing temperature from extended x-ray absorption fine structure (EXAFS) and x-ray absorption near edge structure (XANES) on Pt L 3-edge. Pt silicide (PtSi) was formed by annealing at higher temperatures than 400 °C while Pt layers were stable upon annealing at lower temperatures than 200 °C even for very thin films (10–30 Å).
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