Abstract
Amorphous silicon-oxygen alloy films with various composition have been prepared by r.f. glow discharge decomposition of SiH4 and CO2 gas mixtures. The analysis of infrared absorption spectra and x-ray photoemission spectra shows that the film consists of two phases, a silicon-rich phase and an oxygen-rich phase. We suggest that this two-phase structure results in the high photoconductivity with wide optical gap in these films.
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