Abstract
Free exciton photoluminescence (PL) and reflection spectra of MOVPE-grown ZnSe/GaAs epilayers with thickness higher than the strain relaxation thickness were studied experimentally and theoretically at T = 10−120 K. The calculations were performed using a single- and a two-oscillator model including spatial dispersion, in the frame of the dead layer model. The results allow us to rule out the explanation of the fine structure of the free exciton spectra by the thermal strain-splitting and by polariton effects. It was shown that this structure appears mainly due to the light interference caused by the presence of a dead layer in the near-surface region. The dead layer thickness depends on the illumination intensity of the light used for PL excitation.
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