Abstract
The crystallite boundary mismatch in crystalline films leads to tensile stresses which act on the substrate. Due to these stresses the substrate is bended. In the dense random packing of atoms in an amorphous film local tensile- and compressive stresses compensate and thus the films seem to be free of stresses with regard to the substrate. From this point of view the measurement of mechanical stresses produced by vapour quenched films can be used for structural analysis. Thus an apparatus is described which allows in situ measurements of mechanical stresses and electrical resistivity of vapour quenched films from 1.2 K to 400 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Zeitschrift f�r Physik B Condensed Matter and Quanta
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
