Abstract
Under typical atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD) growth conditions with trimethylgallium (TMG) and arsine sources, reflectance-difference (RD) spectra show that the (001) GaAs surface is in the d(4×4)-like state. With sufficiently high TMG and low AsH3 exposures, we observe RD spectra similar to those obtained during atomic layer epitaxy (ALE) at lower temperatures.
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