Structure modifications of oxide‐confined GaInNAs VCSELs for the second‐generation optical‐fibre communication

Abstract

AbstractFor the second‐generation optical‐fibre communication, lasing sources emitting stable single‐fundamental‐mode (SFM) 1.3‐μm radiation are required. Then oxide‐confined GaAs‐based GaInNAs quantum‐well (QW) vertical‐cavity surface‐emitting lasers (VCSELs) seem to be the best solution. But possibility to reach their efficient 1.3‐μm low‐threshold SFM operation is usually questionable. Therefore the comprehensive fully self‐consistent simulation VCSEL model is used to find the most promising VCSEL structure for this application. It has been concluded from our analysis, that the best performance may be reached in the VCSEL structure in which the proper detuning of the cavity mode towards longer wavelengths and the proper step‐like active‐region QW structure are simultaneously applied. Then the stable 1.3‐μm SFM operation is reached for temperatures exceeding 305 K in the relatively large VCSEL with the 12‐μm diameter activity region. Its threshold current is only somewhat higher than 6 mA at the ambient temperature of 350 K. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)