Structure Modeling of 100 V Class Super-junction Trench MOSFET with Specific Low On-resistance

Abstract

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance (R ON.SP ) and breakdown voltage (V BR ). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 mΩ·cm², which is of lesser value than the required one of 1.2 mΩ·cm² at the class of 100 V and 100 A for BLDC motor.