Structure, Magnetic Property, Surface Morphology, and Surface Energy of Co40Fe40V10B10 Films on Si(100) Substrate

Sin-Liang Ou,Yu-Tang Wang,Yung-Huang Chang,Wei-Hsuan Li,Jiun-Yi Tseng,Wen-Jen Liu,Po-Wei Chi,Chun-Lin Chu,Te-Ho Wu,Yuan-Tsung Chen

doi:10.3390/app10020449

Abstract

When B and V are added to CoFe material, the mechanical strength and spin tunneling polarization of a CoFe alloy can be improved and enhanced by the high tunneling magnetoresistance (TMR) ratio. Based on these reasons, it is worthwhile investigating Co40Fe40V10B10 films. In this work, X-ray diffraction (XRD) showed that Co40Fe40V10B10 thin films have some distinct phases including CoFe (110), CoFe (200), FeB (130), and V (110) diffracted peaks with the strongest diffracted peak for 30 nm. The lowest low-frequency alternate-current magnetic susceptibility (χac) was detected at 30 nm because the large grain distribution inducing that high coercivity (Hc) enhances the spin coupling strength and low χac. The external field (Hext) had difficulty rotating in the spin state, hence, the spin sensitivity was reduced and the χac value decreased due to increased surface roughness. The 20 mm thickness had the highest χac 1.96 × 10−2 value at 50 Hz of an optimal resonance frequency (fres). The surface energy increased from 34.2 mJ/mm2 to 51.5 mJ/mm2 for Co40Fe40V10B10 films. High surface energy had corresponding strong adhesive performance. According to the magnetic and surface energy results, the optimal thickness is 20 nm due as it had the highest χac and strong adhesion.

Highlights

The unique magnetic properties of CoFeB films have attracted wide attention in recent years [1,2,3,4,5,6,7,8].In spin-valve magnetic tunneling junctions (MTJs), CoFeB thin films can be sputtered into free or pinned layers, resulting in apparent tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and soft ferromagnetic properties
X-ray diffraction (XRD) demonstrated that a highthat significant crystalline achieved nm because it could
XRD demonstrated a high significant crystallinepeak peak was was achieved at 30at nm30 because it could be reasonably it hadgrain a large distribution

Summary

Introduction

In spin-valve magnetic tunneling junctions (MTJs), CoFeB thin films can be sputtered into free or pinned layers, resulting in apparent tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and soft ferromagnetic properties. The films can be applied for magnetoresistance random access memory (MRAM) and sensor components [9,10,11,12,13,14,15]. According to these properties, CoFeB films can be used to many kinds of spintronic devices.

Methods

Results

Conclusion