Abstract
AbstractThe crystal structure of thermally oxidized Ge was investigated by high‐resolution electron microscopy (HREM), mainly the interface Ge/oxide. Under special conditions the reaction Ge + O2 → GeO2 which takes place at (111) surface planes leads to suitable thin crystal regions. The GeO2 occurs normally as amorphous films on the crystal surface. Furthermore, hexagonal GeO2 can grow at the interface Ge/oxide by a topotaxial reaction; the orientation relation between these two lattices was ascertained. Intensive electron irradiation was used to initiate and to observe structure changes in boundary regions.
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