Abstract
A 166-nm-thick amorphous Niobium pentoxide layer (Nb2O5) on a silicon substrate was investigated by using time domain thermoreflectance at ambient temperatures from 25 °C to 500 °C. In the time domain thermoreflectance measurements, thermal transients with a time resolution in (sub-)nanoseconds can be obtained by a pump-probe laser technique. The analysis of the thermal transient was carried out via the established analytical approach, but also by a numerical approach. The analytical approach showed a thermal diffusivity and thermal conductivity from 0.43 mm2/s to 0.74 mm2/s and from 1.0 W/mK to 2.3 W/mK, respectively to temperature. The used numerical approach was the structure function approach to map the measured heat path in terms of a RthCth-network. The structure function showed a decrease of Rth with increasing temperature according to the increasing thermal conductivity of Nb2O5. The combination of both approaches contributes to an in-depth thermal analysis of Nb2O5 film.
Highlights
Energy efficiency and saving in microelectronic devices go along with thermal management, as their failure rate increases exponentially with the operating temperature
Nm-thin Niobium pentoxide (Nb2 O5 ) layer was characterized by thermal properties and their temperature dependencies were presented in the temperature range of 25 ◦ C to 500 ◦ C
The temperature-dependent thermal properties of a 166-nm-thin Nb2O5 film were investigated via an analytical approach and via structure function by using the signals of two different time domain thermal reflectance (TDTR) systems
Summary
Energy efficiency and saving in microelectronic devices go along with thermal management, as their failure rate increases exponentially with the operating temperature. The miniaturization and increase of device packing density trigger the importance of the heat dissipation, as well as the thermal management in microelectronics. As far as we know, investigations about their thermal properties and temperature dependency can rarely be found in the literature, these are important parameters for a devices efficiency and reliability [4]. The thermal transient is transformed into a onedevices, is the structure function. The heat path is represented in the structure function as a ladder heat path representation. The heat path is represented in the structure function network of R s and C s. These network elements contain information about the involved materials
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