Abstract

The mechanisms of forming fluoropolymer coatings on silicon substrates via condensation from an active gas phase using directed flows of accelerated electrons and ions are studied. It is demonstrated that electrical properties of the resulting fluoropolymer films strongly depend on the technological parameters of the deposition process. Their most optimal properties are reported when condensation takes place at the temperatures within ~373–386 K. It is shown that thermal annealing of the films in vacuum at 430–470 K improves their electrophysical parameters by re-evaporating the low-molecular complexes from the structure and decreasing the concentration of defects and spin-radicals, while annealing in air gives rise to formation of additional polar groups.

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