Abstract

The design of the developed ion-beam facility with the Tamiris 400-f source (Roth&Rau AG, Germany) is described. The facility is intended for the formation of ordered nanostructures (up to 200 × 200 mm). Themain results of optimizing its parameters for increasing the uniformity and the ion-beam current density (the ion-beam nonuniformity is at most ±5%, and the current density is j ⩾ 1 mA/cm2) are presented.

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