Abstract
Mn-doped Cu3N films were prepared by radio frequency reactive magnetron sputtering method under different manganese concentration. The deposits exhibit a satisfactory crystallinity and a preferred growth orientation along the (111) plane. The shapes of crystalline grains vary from pyramid-like to rugby-ball-like with the Mn-doping constituent in Cu3N film reaching 0.02%. The electrical resistivity of Mn-doped Cu3N films has dramatically increased from 0.102×103 Ω·cm to 0.495×103 Ω·cm at room temperature. Moreover, the reflectivity difference and ferromagnetic property have also been investigated.
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