Abstract
Structure, electrical, and optical properties ofNb-doped BaTiO3 (Nb:BTO) thin films on MgO substrates grown bylaser molecular beam epitaxy with increasing Nb content wereinvestigated. The Nb:BTO thin films with high crystallinity areepitaxially grown on MgO substrates. With more Nb-doped content, theimpurity phases are found in Nb:BTO thin films. Hall measurement atroom temperature confirms that the charge carriers of the Nb:BTO thinfilms are n-type. When the Nb-doped content increases, thecarrier concentration and carrier mobility increase. Meanwhile theoptical transmittance decreases with the increase of the Nb-doping, andthe width of the forbidden band in each group is not affected by thepresence of Nb in the samples. Raman spectra show that the structuralphase transition may occur with the increase of the Nb-doping content,in the meantime more defects and impurities exist in the Nb:BTO thinfilms.
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