Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering

Abstract

and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the films varies from 200 μΩcm to 15 μΩcm depending on the N2 content in the working gas. The square resistance of the films deposited on 96% Al2O3 ceramic wafers is stable below 300 °C.