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Abstract
The highly (1 0 0)-oriented BaTiO 3 thin films were fabricated on LaNiO 3(1 0 0)/Pt/Ti/SiO 2/Si substrates under low-temperature conditions. Substrate temperatures throughout the fabrication process remained at or below 400 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. X-ray diffraction data provided the evidence for single BaTiO 3 phase. Field-emission scanning electron microscopy was used to study the columnar structure of the films. The dielectric properties as a function of frequency in the range of 1 kHz to 1 MHz was obtained. The room temperature remanent polarization (2 P r) and coercive field were found to be ∼5 μC/cm 2 and 50 kV/cm, respectively. The BTO film maintains an excellent fatigue-free character even after 10 9 switching cycles.
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