Abstract
Grazing incidence x-ray diffraction (GID) technique was applied to determine the three dimensional structures of NbSe 2 films grown by van der Waals epitaxy. Atomic arrangements along the surface normal in nm-order films were established from the analysis of Bragg rod profiles measured with GID. The obtained structural polytypes of the films grown on HOPG and Se terminated GaAs( 1 1 1 ) were 2Hb and mixture of 2Hb and 3R, respectively. This result indicates that the polytypes are controlled by the substrate materials in van der Waals epitaxy.
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