Abstract
A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.
Highlights
InGaAsSb/AlGaAsSb quaternary quantum well systems have recently become increasingly prominent due to their potential application as semiconductor diode lasers emitting at wavelengths of around 2 μm, which are in high demand for a variety of applications, including fire detection, infrared imaging sensors, molecular spectroscopy and low loss optical fiber communications [1,2,3,4]
A large Jband τ should be designed elaborately to block the minority carriers from flowing into the high-doped area in order to improve the opto-electrical properties of 2 μm InGaAsSb/AlGaAsSb LDs
2019, 9, 162 should designed elaborately to block the minority carriers from flowing into the high-doped area in order to improve the opto-electrical properties of 2 μm InGaAsSb/AlGaAsSb LDs
Summary
InGaAsSb/AlGaAsSb quaternary quantum well systems have recently become increasingly prominent due to their potential application as semiconductor diode lasers emitting at wavelengths of around 2 μm, which are in high demand for a variety of applications, including fire detection, infrared imaging sensors, molecular spectroscopy and low loss optical fiber communications [1,2,3,4]. The high threshold current density, strongly temperature sensitive 2 μm InGaAsSb/AlGaAsSb LDs caused by Auger recombination rates at the MQW active region and large carrier leakage losses in cladding layers remain a great challenge [5,6]. It is reported that a proper increase of the quantum well number in the active region is an effective solution to solve the above problems, but a high number can degrade the output characteristics of LDs [7,8]. AlGaAsSb muti-quantum well laser diode with carrier blocking layer(CBL) is proposed, with the aim of reducing the threshold current density and improving injection efficiency
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