Abstract
Electronic sputtering of a-C:H films by elastic recoil detection analysis technique is studied under 80 MeV Ni 8+ and 150 MeV Ag 13+ ion irradiations. These studies show that electronic sputtering yield of C and H from the films varies with film structure quite significantly. The structure of the films is analyzed from the characteristic graphitic (G) and disordered (D) modes of Raman vibration. Atomic force microscopy was performed on two films for grain size determination. The difference in electronic sputtering yields is discussed on the basis of structural influence of the films on swift heavy ion and solid interaction.
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