Abstract
A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment.
Highlights
Indium oxide (In2O3), known as an n-type, wide-band gap (2.9 to 3.1 eV) semiconductor [1,2], is of great interest for diverse technological applications in nanoelectronics and optoelectronics [3]
We demonstrate an effective way to improve the structural, optical, and electrical properties of the In2O3 NPs by introducing an in situ thermal radiation treatment under an oxidizing agent plasma condition
In summary, we demonstrated an effective method to enhance the crystal structure, direct transition absorption, and electrical conductivity of In2O3 NPs by introducing a thermal radiation treatment
Summary
Indium oxide (In2O3), known as an n-type, wide-band gap (2.9 to 3.1 eV) semiconductor [1,2], is of great interest for diverse technological applications in nanoelectronics and optoelectronics [3]. Zero-dimensional In2O3 nanoparticles (NPs), with a variety of tunable morphologies ranging from octahedra, hexagons, cubes, to pyramids, are beneficial as building blocks for indium oxide-based or hybrid transistors [4]. Their remarkably large surface-to-volume ratio and good stability have made them promising materials in gas sensors/biosensors [5,6], photocatalysis [7], photoelectrochemical cells [8], and ultraviolet photodetectors [9,10]. Despite the advantages of using this material, In2O3 NP-based devices usually encounter several deficiencies, for instance, low conductivity and poor adhesion.
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