Structure, Composition, and Properties of Zn- and O-Ion Implanted Silicon at Elevated Temperatures

Abstract

Czochralski-grown Si substrates (n-type, orientation (100)) are subjected to double implantation, notably, initially by 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and then with 16O+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The substrates during implantation are held at ~350°C. The implanted Si substrates contain radiation-induced defects and their clusters such as twins, dislocations, and nanoclusters, notably, Zn-containing nanoclusters with an average radius of 10–50 nm predominantly consisting of the metallic Zn phase and partially from the ZnO phase formed on the surface and in the substrate near-surface layer. Photonic annealing to an effective temperature of 700°C optimal for the formation of the ZnO phase leads to the annealing of radiation-induced defects, and Zn-containing nanoclusters presumably consisting of the ZnO phase and partially of the Zn2SiO4 phase with an average diameter of 50–100 nm are recorded on the sample surface.