Abstract

With Al2O3 and graphite as raw materials, CaF2 and B2O3 as additives, AlN whiskers were fabricated by a carbo-thermal reduction method. The fabrication mechanism and growth characteristics of AlN whiskers were investigated. At the beginning of the high-temperature fabrication, AlN whiskers grew by the vapour/liquid/solid (VLS) mechanism, and defects existed on the surfaces of the whiskers. In later stages, the VLS mechanism possibly changed to a vapour/solid (VS) mechanism, and the defects disappeared. The orientation of most AlN whiskers was normal to \(\{ 10\bar 1n\} \) (n=0, 1, 2, 3), and normal to \(\{ \bar 12\bar 1n\} \) (n=0, 1, 2). The growth processes of both two-dimensional nucleation and screw dislocations existed at the same time. © 1998 Kluwer Academic Publishers

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