Abstract
Fe/MgF 2 / Co magnetic tunnel junctions (MTJs) with an oxide seed layer (MgO, Fe–O) inserted between an Fe bottom electrode and a MgF2 barrier layer have been prepared through the use of molecular beam epitaxy, and the effects of the seed layers on structure of subsequently deposited MgF2 barrier layers and tunnel magnetoresistance (TMR) have been investigated. The crystallographic orientation of MgF2 layers depends significantly on the seed layers, and furthermore, it has been found that the surface roughness of MgF2 layer is reduced by inserting a MgO seed layer. In Fe/MgF2 (3–12 nm)/Co MTJs without any seed layer, top Fe and bottom Co electrodes contact each other through pin holes in MgF2 layers. On the other hand, however, Fe and Co electrodes are separated both magnetically and electrically in Fe/MgO (0.3–0.5 nm)/MgF2 (2–5 nm)/Co MTJs, i.e., MgF2-based MTJs have successfully been prepared by inserting a thin MgO seed layer, resulting in TMR of about 10% observed at 4.2 K.
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