Abstract
Pr 2 O 3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronics devices. The technologically important thickness range from 1to10nm has been investigated by synchrotron radiation-grazing incidence x-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si(001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit-cell lattice parameters as a function of film thickness from 1to10nm, the transition from almost perfect pseudomorphism to bulk values is detected.
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