Abstract
This paper presents the results of the investigation of Ge1-xSnx epitaxial layers grown by the hot wire chemical vapor deposition (HW CVD) method with simultaneous evaporation of Sn from a standard effusion cell. The Ge1-xSnx with a Sn molar fraction of 7.2% and a full width at half maximum (FWHM) of the rocking curve of 7.6` demonstrated intense photoluminescence at room temperature. The peaks in the energy bands 0.70 – 0.73 eV and 0.63 – 0.65 eV have been observed in the photoluminescence spectra. These peaks were related to the direct and indirect interband radiative optical transitions in GeSn, respectively.
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