Abstract
Cd1–xMn x Se (х = 0.03) epitaxial films are produced by the molecular beam condensation method in a vacuum chamber with a residual pressure of 10–4 Pa on mica and glass substrates. It is established that at room temperature and at a substrate temperature of T = 573 K films of polycrystalline structure grow on the mica substrates, but films of both polycrystalline and amorphous structure grow on the glass substrates. It is shown that the polycrystalline Cd1–xMn x Se (х = 0.03) films, unlike the bulk crystals, have a sphalerite-type structure with a lattice parameter of a = 6.05 A. Increasing the substrate temperature to 673 K leads to epitaxial growth with the direction [111]. Dark aggregates, observed on the film surface, are removed using a source of compensating Se vapors during the growth process. The optimal conditions for the production of structurally perfect epitaxial films are defined.
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