Abstract
Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural properties and the Raman scattering spectral dependences have been investigated. The dependence of the main lattice parameters and intensities of the Raman scattering lines on the substrate material is demonstrated.
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