Abstract
Ge 2Sb 2Te 5 films were deposited by RF sputtering on Si(1 0 0)/SiO 2 substrates and the effect of boron implantation on the structure, sheet resistance and surface topography of Ge 2Sb 2Te 5 film is studied intensively. Due to boron implantation, phase separation takes place and the structure changes from face-centered-cubic into multi-phases composing of hexagonal GeTe and Sb 2Te 3 crystalline phases when the annealing temperature is low. However, phase separation is suppressed by boron implantation under the conditions of high boron implant dose and high annealing temperature. Also the boron implantation has great effect on the sheet resistance of Ge 2Sb 2Te 5 film. The major reason may be microstructure changes induced by boron implantation, which include defects formation, phase separation, and grain refinement. There may be many advantages, such as improving the resistance stability, reducing the required heating power, increasing the crystallization speed, and improving the temperature stability, for the application potential of the B-doped Ge 2Sb 2Te 5 film if the implant dose is properly selected.
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