Abstract
The 2 μm thick copper films have been electrodeposited onto sputtered copper seed layers from a sulfate-sulfuric acid bath with 3--dimethylaminodithiocarbamoyl-1-propanesulfonic acid and polyethylene glycol (Mw 8000) organic additives. Crystal structure, surface structure, stress, and resistivity of the films were characterized over four weeks. Room-temperature recrystallization occurs in the films, accompanied by a change in stress, from compressive to slightly tensile, and a decrease in resistivity. The role of stress-relieving recrystallization is linked to the increase in grain size and enhancement in (111) and especially (200) texture. © 2003 The Electrochemical Society. All rights reserved.
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