Abstract
By deposition onto amorphous substrate, cooled with liquid nitrogen, it is possible to obtain indium thin films with a small degree of surface roughness and good crystallization. In these films, the conduction electrons are partially specularly reflected by the surfaces. By deposition of SiO or carbon onto the surfaces, it is possible to stop the superficial migration of atoms. It is, therefore, possible to anneal the indium thin films at a temperature near the melting point, without destruction of the films. Such films present very large, nearly perfect crystals after annealing.
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