Abstract
Ti-O-N films with different structure and composition were synthesized on silicon wafer by reactive unbalanced magnetron sputtering at different X which represents the flux ratio of N2/ (O2+N2). As X increases from 0% to 100%, the structure of the films changes from TiO2 to TiN gradually. The crystal TiN is found only in the film fabricated in 100% N2. The band gap and the sheet resistance of films decrease with X increasing. Surface energy and water contact angle of Ti-O-N films were not influenced by X. The blood compatibility of Ti-O-N films got worse with X increasing.
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