Abstract
In this paper we report the first results obtained in the study on the properties of porous GaAs (P-GaAs) produced by electrochemical etching in electrolytes on the basis of hydrofluoric acid. As the initial material we used monocrystalline n- and p-type (100)GaAs substrates Te- and Zn-doped to 2*10<SUP>18</SUP> cm<SUP>-3</SUP> and 6*10<SUP>18</SUP> cm<SUP>-3</SUP>, respectively. The substrates were subjected to chemical-mechanical and diamond-paste polish. Etching was performed in an electrolytic cell with a platinum cathode in the galvanostatic regime with anode current densities ranging from 5 to 150 mA/cm<SUP>2</SUP>. We were interested in P-GaAs layers with thicknesses from 0.5 to 50 micrometers. The methods used in the study of P-GaAs samples included x-ray diffractometry, electron microscopy, x-ray microanalysis, secondary ion-mass spectroscopy, electrochemical C-V profiling and photoluminescence.
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