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Abstract
As x S 1 − x films with x from 0.33 to 0.57 were prepared by ion-beam sputtering of glassy and crystalline targets. All as-deposited films were amorphous even if the molecular crystals, As 4S 4 and As 4S 3, were sputtered. The film structure was investigated by IR spectroscopy. In comparison with thermally evaporated films, as-deposited ion-beam sputtered (IBS) ones do not contain any As 4S 4- and As 4S 3-like molecular fragments. As 4S 4 and As 4S 3 are formed in films containing As more than 40 at.% as a result of illumination or annealing. Photobleaching was obtained in all as-deposited films without any photocrystallization. Photoresistive properties of films were investigated. It was found that the best selectivity of etching in amine solutions is obtained for As 4S 3 amorphous films.
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