Abstract
To study the nature and properties of potential barriers in gallium arsenide devices, we have investigated structural phase transitions in GaAs contacts with multilayer films containing refractory transition-metal borides (TiB2, LaB6). We verified the important role in degrading Schottky barrier device performance played by local mechanical stresses introduced at the interface by lateral nonuniformities in interphase interactions. We examine the electrical properties of MIS gallium arsenide devices, taking into account the high density of electronic surface states (ESS). We show it is possible to control the density of ESS by selecting the dielectric, and we discuss its deposition and annealing with a pulsed laser. We discuss the nature of potential barriers in gallium arsenide devices, drawing upon our data and previously published data and modern theoretical models.
Published Version
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