Abstract
We study epitaxial GaAs and InGaAs films produced by molecular-beam epitaxy in the temperature range 150–480°C and with various arsenic partial pressures. We determine the structural and electrophysical characteristics of the film (the excess arsenic, the crystal lattice parameter, and the carrier concentration and mobility) as a function of the growth conditions. The influence of annealing on the cluster-structure formation in low-temperature MBE films, and on their properties, is also studied. In low-temperature GaAs we find a characteristic microwave absorption signal indicating the presence of a superconducting phase. We discuss the possible nature of this phase with regard to clusters of gallium or an In-Ga alloy.
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