Abstract

Currently, Nanjing South Railway Station planning to implement slate roof renovation is integrating solar cell modules into traditional roof materials to generate clean energy. Copper–indium–gallium diselenide (CuIn1−xGa x Se2, CIGS) is one of the most promising materials for thin film solar cells. Cu(In1−xGa x )Se2 films were deposited by a one-step radio frequency magnetron sputtering process at low substrate temperature. X-ray diffraction, Raman, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and electrical and optical measurements were carried out to investigate the deposited films. The results reveal that a temperature of 320 °C is critical for near-stoichiometric CIGS films with uniform surface morphology. Cu-rich phase particulates are found at less than this temperature. The sample deposited at 380 °C gives well-crystalline single-phase CIGS film. Furthermore, the electrical and optical performances of the absorber layer are improved significantly with the increasing substrate temperature.

Highlights

  • Solar panels cover the majority of the railway station roofs and are capable of providing 7.17 MW of electricity in Nanjing South Railway Station

  • The results reveal that a temperature of 320 °C is critical for near-stoichiometric CIGS films with uniform surface morphology

  • Highefficiency CIGS devices were prepared at high substrate temperatures (Tsub) of [550 °C, which is close to the softening temperature of the soda-lime glass (SLG) substrates [2, 3]

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Summary

Introduction

Solar panels cover the majority of the railway station roofs and are capable of providing 7.17 MW (megawatt) of electricity in Nanjing South Railway Station. More and more stations planning to implement slate roof renovation are integrating solar cell modules into traditional roof materials to generate clean energy This system is expected to be widely adopted in the near future because it promotes the effective use of platform roof space, which occupies a substantial part of a station. In contrast to the above, CIGS films fabricated by low-temperature-deposition processes (LTDPs) are more attractive for mass production. This can reduce the thermally induced stress on the substrate, and offer the feasibility for flexible CIGS solar cells on polymer sheet [4]. We improved the sputtering power from 80 to 100 W to get high-quality absorber layers and systematically investigated the structure and properties of CIGS films fabricated at less than 380 °C in this study. XRD, SEM, Raman, optical and electrical measurements were carried out to gain a better understanding of the relation between Tsub and the film properties

Experimental details
Morphology and composition
Crystal structure
B CIGS 2
Conclusion
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