Abstract
Bilayer CoSi2/Si/CoSi2/Si system has been obtained by the method of ion implantation, and optimal conditions for implantation and postimplantation annealing have been found. It has been shown that this system forms when the high and low ion energies differ by no less than 15–20 keV. The structures have smooth surface and high crystallinity.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
