Abstract
ZnS‐core/In2O3‐shell nanowires have been prepared by using a two‐step process: the thermal evaporation of ZnS powders on Si(100) substrates coated with Au thin films and the sputter‐deposition of In2O3. The ZnS nanowires were a few tens to a few hundreds of nanometers in diameter and up to a few hundreds of micrometers in length. ZnS nanowires have an emission band centered at around 570 nm in the yellow region. The yellow emission has been enhanced in intensity by coating the ZnS nanowires with In2O3 and further enhanced by annealing in a reducing atmosphere, but it is degraded by annealing in an oxidative atmosphere.
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