Abstract

Al-free and Al-doped V2O5 nanostructures were synthesized by a thermal-chemical vapor deposition (CVD) process on Si(100) at 850 °C under 1.2 × 10−1 Torr via a vapor-solid (V-S) mechanism. X-ray diffraction (XRD), Raman, and high-resolution transmission electron microscopy (HRTEM) confirmed a typical orthorhombic V2O5 with the growth direction along [110]-direction of both nanostructures. Metallic Al, rather than Al3+-ion, was detected by X-ray photoelectron spectroscopy (XPS), affected the V2O5 crystallinity. The photoluminescence intensity of V2O5 nanostructure at 1.77 and 1.94 eV decreased with the increasing Al-dopant by about 61.6% and 59.9%, attributing to the metallic Al intercalated between the V2O5-layers and/or filled in the oxygen vacancies, which behaved as electron sinks. Thus the Al-doped V2O5 nanostructure shows the potential applications in smart windows and the electrodic material in a Li-ion battery.

Highlights

  • X-ray diffraction (XRD) revealed the typical orthorhombic phase of the V2 O5 with c/a and c/b ratios that increase with the Al dopant concentration, suggesting that Al0

  • The full width at half maximum (FWHM) has a similar value with a deviation of ±2.9% upon the addition of Al dopant, indicating that

  • high-resolution transmission electron microscopy (HRTEM) verified that the growth direction of both Al-free and Al-doped V2 O5 NSs is in the [110]-direction

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Summary

Introduction

F.-S.; Shih, H.C. Structure and Vanadium is a multi-valent element with oxidation states of V2+ , V3+ , V4+ , and V5+ , and has several phase-states, including vanadium monoxide (VO), vanadium sesquioxide (V2 O3 ), vanadium dioxide (VO2 ), and vanadium pentoxide (V2 O5 ) [1,2]. Vanadium pentoxide (V2 O5 ) is the most stable phase; it has an orthorhombic structure and layered VO5 structures of square pyramids that share corners and edges [3,4]. The layered structure results in the V3d split-off conduction band so that V2 O5 has direct and indirect band gaps at 2.3 and 1.9 eV [5]. Oxygen vacancies (VO ) are the most common defects in. The conduction band that has split off and the VO -defects provide a flexible pathway for luminescence

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