Abstract
SnS and SnS 2 thin films have been prepared by the dip technique. In this technique, a substrate was dipped into an alcoholic solution of the corresponding chloride and thiourea and then withdrawn vertically at a controlled speed, and finally baked in a high temperature furnace at atmospheric condition. XRD and SEM data suggest that good quality SnS and SnS 2 films are obtained at a baking temperature of 300 and 360°C, respectively. Values of band gap for SnS and SnS 2 obtained from spectral response of photoconductivity are 1.4 and 2.4 eV, respectively. The indirect allowed band gap values for SnS 2 film obtained from optical absorption measurements are 1.95 and 2.05 eV. Open-air annealing of both SnS and SnS 2 films at 400°C converts them to transparent conducting SnO 2.
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