Abstract
Epitaxial heterostructures produced by MOCVD on the basis of Al x Ga1 − x As ternary alloys with the composition parameter x ≈ 0.20–0.50 and doped to a high Si and P atomic content are studied. Using the high-resolution X-ray diffraction technique, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectroscopy, it is shown that the epitaxial films grown by MOCVD are formed of five-component (Al x Ga1 − x As1 − y P y )1 − z Si z alloys.
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