Structure and morphology of the reaction fronts during the formation of MgAl2O4 thin films by solid state reaction between R-cut sapphire substrates and MgO films

Abstract

The thin-film spinel-forming solid state reaction between Al2O3 and MgO has been studied under initially non-coherent conditions. MgO films in (001) orientation on $$(1\bar 1.2)$$ -cut sapphire single crystals were heated at 1100°C for 30 min or 1h. The film/substrate reaction proceeds via cation counterdiffusion as was revealed by a marker experiment. The MgAl2O4 films formed were predominantly (001) oriented, with an additional systematic tilt of about 5° of the spinel lattice around the [010] axis. The structure of the Al2O3 $$(1\bar 1.2)$$ /MgAl2O4(001) and MgAl2O4(001)/MgO(001) reaction fronts has been investigated on cross section samples by high-resolution electron microscopy. It appeared that after starting from an incoherent interface, the Al2O3 $$(1\bar 1.2)$$ /MgAl2O4(001) front assumes an almost fully coherent structure during the reaction. As a result the lattice misfit is reduced to 1%, and interfacial ledges are formed. The latter most probably play an active role in the necessary c.p.h. → f.c.c. reconstruction of the oxygen sublattice. The MgAl2O4(001)/MgO(001) reaction front consists of coherent regions divided by misfit dislocations. During the reaction the former run ahead whereas the latter lag behind. As a result the morphology of the reaction front is bowed. The results confirm earlier observations of Carter and Schmalzried of the semicoherent Al2O3(00.1)/CoAl2O4(111) interface, thus strongly supporting the conclusion of a fundamental new phase transformation mechanism specific to oxide systems.