Abstract
The structure and morphology of monolayer 2H-MoTe2 on GaAs(111)B grown by molecular-beam epitaxy have been studied using scanning tunneling microscopy, electron diffraction, and X-ray photoelectron spectroscopy. The MoTe2 film grown and annealed under the Te-rich condition is mainly composed of a pure 2H phase, while, under the Te-deficient conditions, the 2H-MoTe2 phase begins to evolve into nanowire-like structures owing to the desorption of Te. The 2H-MoTe2(0001) film on GaAs(111)B exhibits two types of energetically favorable epitaxial orientations; one is a perfect alignment of [11overline{2}0]MoTe2 // [1overline{1}0]GaAs, and the other shows a slight in-plane rotation of ± 0.77∘, which reduces the effective lattice mismatch between MoTe2 and GaAs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
