Abstract
Unintentionally doped n-ZnO(0002) films prepared by pulse laser deposition were implanted with various doses of Mn+. Photoluminescence measurement revealed that the incorporation of Mn in the films shifts the near band edge position towards the higher energy side. Magnetism measurements of the Mn-implanted samples showed clear magnetic properties. Magnetization–field hysteresis loops were observed at 300 K and the temperature-dependent magnetization showed magnetic behavior up to 350 K, which is in agreement with the theoretical prediction.
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