Abstract

The InGaN/AlGaN multiquantum-well microrod-array structure is grown on c-plane GaN template with SiO2 microholes patterned as a mask. The surface morphology exhibits the accurately ordered microrod-array structure. Temperature-dependent photoluminescence (PL) measurement indicates that the PL peaks redshift as the temperature increases. Room-temperature PL and cathode luminescence spectra show that the different positions on InGaN/AlGaN microrod arrays have different luminous peaks. The successful fabrication of InGaN/AlGaN microrod arrays is of great significance for the realization of multicolor emission and the design of new optoelectronic devices.

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