Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films

Abstract

X-Ray diffraction (XRD), Raman scattering , Cathodoluminescence measurements (CL) and Photoluminescence (PL) were employed to characterize the structure and optical properties of Dysprosium (Dy) and Europium (Eu) implanted GaN films grown by MOCVD. For GaN: Dy 3+ samples, Dy 3+ implantation leads to strain and radiation damage increasing with Dy 3+ implanted fluence . From the CL spectra, the characteristic transitions from the excited 4 F 9/2 level of Dy 3+ to 6 H 15/2 (485 nm), 6 H 13/2 (583 nm) and 6 H 11/2 (671 nm) were observed. For Dy 3+ and Eu 3+ co-doped GaN, considering the doping effects of Dy 3+ , we proposed that there might exist a resonance energy transfer process from Eu 3+ ions 7 F 0 → 5 D 2 to Dy 3+ ions 4 F 9/2 → 6 H 15/2 , which is dominated by the electric dipole-dipole interaction. • Eu 3+ , Dy 3+ co-implanted GaN crystalline thin films were prepared for the first time. • Energy transfer processes between Eu 3+ and Dy 3+ were proposed. • Dy implantation leads to strain and radiation damage increasing with Dy dose.