Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

Abstract

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH4 and a mixture of C2H2+H2, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH4, the G peak position around 1520cm−1 and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C–C sp3 fraction in this film is about 20at.%. These films are diamond-like a-C:H films. For the films deposited from C2H2+H2, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH4 increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C2H2+H2 with increasing bias voltage is observed.