Abstract
BaTi1−xFexO3 (0.0≤x≤0.02) thin films were prepared on Pt/Ti/SiO2/(100)Si substrates via the sol–gel process, and the effect of Fe substitution on the structure and properties was studied. A detailed structure analysis performed by X-ray diffraction (XRD) and Raman spectra confirmed that the tetragonality of BaTi1−xFexO3 thin films decreased as the Fe content increased. Temperature-dependent Raman spectra in conjunction with temperature-dependent dielectric measurements revealed the coexistence of two different ordering structures in the BaTi1−xFexO3 films for x=0.01, and the film exhibited enhanced ferroelectric properties with a remnant polarization Pr of 13.8μC/cm2. Changes in the ferroelectric properties due to variations in the Fe content were attributed to structural differences in the films.
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