Abstract
AbstractI report the formation of a triple-layer metal film by deposition of magnesium onto the double-layer indium film on Si(111). The deposited magnesium atoms are intercalated between the indium layer and silicon substrate. The film is composed of three metal layers with nearly hexagonal close-packed arrangement stacked in an ABC sequence. The (In, Mg) triple-layer phase shows free-electron-like electronic structure. The Fermi surface is composed of two concentric circles with different radii. The larger and smaller Fermi circles are found to come from bonding and antibonding states between the top and middle layers of the three metal layers. The bottom layer mainly composed of magnesium acts as a buffer layer to saturate the silicon dangling bonds and realize a nearly freestanding double-layer metal.
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