Abstract
AbstractWe have recently found that the silicon trivacancy (V3) is a bistable defect that can occur in fourfold coordinated and (110) planar configurations for both the neutral and singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80, 235207 (2009)]. Acceptor levels of V3 in both these configurations have been determined. It has also been shown that at T > 200 °C, the interaction of mobile trivacancies with interstitial oxygen atoms results in the formation of V3O complex with the first and second acceptor levels at Ec −0.46 and −0.34 eV. In the present work we identify donor levels arising from V3 and V3O complexes by means of deep level transient spectroscopy (DLTS) and high‐resolution Laplace DLTS on n+p silicon structures irradiated with 6 MeV electrons, combined with density functional modeling studies. It is found that both defects possess two donor levels in the (110) planar configurations. First donor levels at Ev +0.19 and +0.235 eV, and the second donor levels at Ev +0.105 and +0.12 eV are found for the V3 and V3O complexes, respectively.
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